Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture

By far, despite the progress, there are no related reports on the construction of oxide heterojunction (HJ) based on electrospinning. Thus, developing electrospinning strategy to implement oxide-based heterojunction TFTs will help overcoming important bottlenecks associated with the level of performance and manufacturing of TFT technologies. Herein, the first realization of electrospinning-derived stacked dual-channel (DC) HJ TFTs composed of alternating layers of In₂O₃ and ZnO has been reported. By carefully designing the TFT channel architecture and varying the stacking density in both nanofibers, significant enhancement in both the electron mobility and TFT stress stability have been demonstrated. Meanwhile, our findings further elucidate the significant advance of electrospinning-derived double channel heterojunction transistors toward practical applications for future low-cost and high-performance electronics.