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Satoshi Yamamoto
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Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy
Description/Abstract:
The halide vapor phase epitaxy of e-Ga2O3 is demonstrated for the first time. The e-Ga2O3 films are grown on GaN (0001), AlN (0001), and ...
Keyword:
HVPE
,
ε-Ga2O3
, and
κ-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Encarnación G. Víllora
,
Yoshitaka Matsushita
,
Satoshi Yamamoto
, and
Kiyoshi Shimamura
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
30/01/2024
Date Modified:
01/02/2024
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HVPE
1
ε-Ga2O3
1
κ-Ga2O3
1
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English
1
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AIP Publishing
1
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Article
1
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open
1
Rights Statement Sim
In Copyright
1
Author
Encarnación G. Víllora
1
Kiyoshi Shimamura
1
Satoshi Yamamoto
[remove]
1
Yoshitaka Matsushita
1
Yuichi Oshima
1
Journal
JOURNAL OF APPLIED PHYSICS
1