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Filtering by: Author Jun Suda Author Shoji Ishibashi

Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers

Description/Abstract:

For rooting the development of GaN-based optoelectronic devices, understanding the roles of midgap recombination centers (MGRCs), namely ...

Keyword:

GaN

Resource Type:

Article

Author:

Shigefusa F. Chichibu, Kohei Shima, Akira Uedono, Shoji Ishibashi, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Hirotaka Watanabe, Atsushi Tanaka, Yoshio Honda, Jun Suda, Hiroshi Amano, Tetsu Kachi, Toshihide Nabatame, Yoshihiro Irokawa, and Yasuo Koide

Journal:

JOURNAL OF APPLIED PHYSICS

Date Uploaded:

09/05/2024
Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

Description/Abstract:

Behaviors of vacancy-type defects in ion-implanted GaN were studied by means of positron annihilation. Si or Mg ions were implanted into ...

Keyword:

gallium nitride, positron, and vacancy

Resource Type:

Article

Author:

Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohokubo, Nobuyuki Ikarashi, Kazuhiro Hono, and Tetsu Kachi

Journal:

Proceedings of SPIE - The International Society for Optical Engineering

Date Uploaded:

04/10/2023

Date Modified:

04/10/2023