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James S Speck
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Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam epitaxy
Description/Abstract:
We investigated the growth characteristics of homoepitaxial (001) b-Ga2O3 by plasma-assisted molecular beam epitaxy.
Keyword:
MBE
and
β-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Elaheh Ahmadi
,
Stephen Kaun
,
Feng Wu
, and
James S Speck
Journal:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
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MBE
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β-Ga2O3
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English
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IOP Publishing
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Elaheh Ahmadi
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Feng Wu
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James S Speck
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Stephen Kaun
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Yuichi Oshima
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SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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