Skip to Content
Toggle navigation
Home
About
Help
Contact
Login
Search MDR
Go
Search Constraints
Start Over
Filtering by:
Author
Huanying Sun
Remove constraint Author: Huanying Sun
1
entry found
Sort by relevance
relevance
date uploaded ▼
date uploaded ▲
date modified ▼
date modified ▲
Number of results to display per page
10 per page
10
per page
20
per page
50
per page
100
per page
View results as:
List
Gallery
Masonry
Slideshow
Search Results
High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond
Description/Abstract:
Here, electronic-grade phosphorus-doped n-type diamond epilayer with anatomically flat surface based on step-flow nucleation mode is fabr...
Keyword:
Diamond, n-type, MOSFET
Resource Type:
Article
Author:
Meiyong Liao
,
Huanying Sun
, and
Satoshi Koizumi
Journal:
Advanced Science
Date Uploaded:
09/04/2024
Toggle facets
Limit your search
Type of work
Publication
1
Keyword
Diamond, n-type, MOSFET
1
Language
English
1
Publisher
Wiley
1
Resource type
Article
1
Visibility
open
1
Rights Statement Sim
Creative Commons BY Attribution 4.0 International
1
Author
Huanying Sun
[remove]
1
Meiyong Liao
1
Satoshi Koizumi
1
Funder
Japan Society for the Promotion of Science
1
Journal
Advanced Science
1