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Hideki Sakurai
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Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam
Description/Abstract:
Behaviors of vacancy-type defects in ion-implanted GaN were studied by means of positron annihilation. Si or Mg ions were implanted into ...
Keyword:
gallium nitride
,
positron
, and
vacancy
Resource Type:
Article
Author:
Akira Uedono
,
Hideki Sakurai
,
Jun Uzuhashi
,
Tetsuo Narita
,
Kacper Sierakowski
,
Shoji Ishibashi
,
Shigefusa F. Chichibu
,
Michal Bockowski
,
Jun Suda
,
Tadakatsu Ohokubo
,
Nobuyuki Ikarashi
,
Kazuhiro Hono
, and
Tetsu Kachi
Journal:
Proceedings of SPIE - The International Society for Optical Engineering
Date Uploaded:
04/10/2023
Date Modified:
04/10/2023
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
Description/Abstract:
We used atomic-scale direct observations by transmission electron microscopy (TEM) and atom probe tomography to clarify the crystallograp...
Keyword:
atom probe tomography
,
gallium nitride
, and
transmission electron microscopy
Resource Type:
Article
Author:
Emi Kano
,
Keita Kataoka
,
Jun Uzuhashi
,
Kenta Chokawa
,
Hideki Sakurai
,
Akira Uedono
,
Tetsuo Narita
,
Kacper Sierakowski
,
Michal Bockowski
,
Ritsuo Otsuki
,
Koki Kobayashi
,
Yuta Itoh
,
Masahiro Nagao
,
Tadakatsu Ohkubo
,
Kazuhiro Hono
,
Jun Suda
,
Tetsu Kachi
, and
Nobuyuki Ikarashi
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
28/09/2023
Date Modified:
28/09/2023
Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
Description/Abstract:
An area selective doping via ion implantation is a key technology to realize gallium nitride (GaN) based energy-efficient power devices; ...
Keyword:
atom probe tomography
,
cathodoluminescence
,
gallium nitride
,
implantation
, and
scanning transmission electron microscopy
Resource Type:
Article
Author:
Jun Uzuhashi
,
Jun Chen
,
Ashutosh Kumar
,
Wei Yi
,
Tadakatsu Ohkubo
,
Ryo Tanaka
,
Shinya Takashima
,
Masaharu Edo
,
Kacper Sierakowski
,
Michal Bockowski
,
Hideki Sakurai
,
Tetsu Kachi
,
Takashi Sekiguchi
, and
Kazuhiro Hono
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
04/07/2023
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gallium nitride
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3
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2
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3
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Creative Commons BY Attribution 4.0 International
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Hideki Sakurai
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Jun Uzuhashi
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Proceedings of SPIE - The International Society for Optical Engineering
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