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Gang He
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Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture
Description/Abstract:
By far, despite the progress, there are no related reports on the construction of oxide heterojunction (HJ) based on electrospinning. Thu...
Keyword:
Dual-Channel
and
Transistors
Resource Type:
Article
Author:
Bo He
,
Gang He
,
Shanshan Jiang
,
Jiangwei Liu
,
Elvira Fortunato
, and
Rodrigo Martins
Journal:
Advanced Electronic Materials
Date Uploaded:
05/10/2023
Date Modified:
05/10/2023
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Dual-Channel
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Transistors
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Wiley
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Rights Statement Sim
Creative Commons BY Attribution 4.0 International
1
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Bo He
1
Elvira Fortunato
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Gang He
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Jiangwei Liu
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Advanced Electronic Materials
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