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Filtering by: Author Encarnaciόn G. Vίllora Rights Statement Sim Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International

Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0001) substrates by Halide Vapor Phase Epitaxy

Description/Abstract:

We demonstrate the high-speed growth of b-Ga2O3 epilayers on off-angled sapphire (0001) substrates by the halide vapor epitaxy. (-201) or...

Keyword:

heteroepitaxy and β-Ga2O3

Resource Type:

Article

Author:

Yuichi Oshima, Encarnaciόn G. Vίllora, and Kiyoshi Shimamura

Journal:

JOURNAL OF CRYSTAL GROWTH

Date Uploaded:

22/01/2024

Date Modified:

23/01/2024