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Filtering by: Author Akira Uedono

Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

Description/Abstract:

Behaviors of vacancy-type defects in ion-implanted GaN were studied by means of positron annihilation. Si or Mg ions were implanted into ...

Keyword:

gallium nitride, positron, and vacancy

Resource Type:

Article

Author:

Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohokubo, Nobuyuki Ikarashi, Kazuhiro Hono, and Tetsu Kachi

Journal:

Proceedings of SPIE - The International Society for Optical Engineering

Date Uploaded:

04/10/2023

Date Modified:

04/10/2023
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation

Description/Abstract:

We used atomic-scale direct observations by transmission electron microscopy (TEM) and atom probe tomography to clarify the crystallograp...

Keyword:

atom probe tomography, gallium nitride, and transmission electron microscopy

Resource Type:

Article

Author:

Emi Kano, Keita Kataoka, Jun Uzuhashi, Kenta Chokawa, Hideki Sakurai, Akira Uedono, Tetsuo Narita, Kacper Sierakowski, Michal Bockowski, Ritsuo Otsuki, Koki Kobayashi, Yuta Itoh, Masahiro Nagao, Tadakatsu Ohkubo, Kazuhiro Hono, Jun Suda, Tetsu Kachi, and Nobuyuki Ikarashi

Journal:

JOURNAL OF APPLIED PHYSICS

Date Uploaded:

28/09/2023

Date Modified:

28/09/2023