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Akira Uedono
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Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application
Description/Abstract:
GaN films were grown on HVPE-AlN/SiC templates by metalorganic chemical vapor deposition (MOCVD) without annealing a reactor to eliminate...
Keyword:
HEMT
,
III-V nitride semiconductor
, and
heterointerface
Resource Type:
Article
Author:
Masatomo Sumiya
,
Osamu Goto
,
Yuki Takahara
,
Yasutaka Imanaka
,
Liwen Sang
,
Noboru Fukuhara
,
Taichiro Konno
,
Fumimasa Horikiri
,
Takeshi Kimura
,
Akira Uedono
, and
Hajime Fujikura
Journal:
Japanese Journal of Applied Physics
Date Uploaded:
10/12/2024
Influence of Ge to the formation of defects in epitaxial Mg<sub>2</sub>Sn<sub>1−x </sub>Ge<sub> x </sub> thermoelectric thin films
Description/Abstract:
Defect formation in epitaxial Mg2Sn1–xGex thermoelectric (TE) thin films grown via MBE was studied. We examined the defect formations and...
Keyword:
thermoelectric
Resource Type:
Article
Author:
Kenneth Magallon Senados
,
Mariana S. L. Lima
,
Takashi Aizawa
,
Isao Ohkubo
,
Takahiro Baba
,
Akira Uedono
,
Takeaki Sakurai
, and
Takao Mori
Journal:
Japanese Journal of Applied Physics
Date Uploaded:
29/07/2024
Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
Description/Abstract:
For rooting the development of GaN-based optoelectronic devices, understanding the roles of midgap recombination centers (MGRCs), namely ...
Keyword:
GaN
Resource Type:
Article
Author:
Shigefusa F. Chichibu
,
Kohei Shima
,
Akira Uedono
,
Shoji Ishibashi
,
Hiroko Iguchi
,
Tetsuo Narita
,
Keita Kataoka
,
Ryo Tanaka
,
Shinya Takashima
,
Katsunori Ueno
,
Masaharu Edo
,
Hirotaka Watanabe
,
Atsushi Tanaka
,
Yoshio Honda
,
Jun Suda
,
Hiroshi Amano
,
Tetsu Kachi
,
Toshihide Nabatame
,
Yoshihiro Irokawa
, and
Yasuo Koide
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
09/05/2024
Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam
Description/Abstract:
Behaviors of vacancy-type defects in ion-implanted GaN were studied by means of positron annihilation. Si or Mg ions were implanted into ...
Keyword:
gallium nitride
,
positron
, and
vacancy
Resource Type:
Article
Author:
Akira Uedono
,
Hideki Sakurai
,
Jun Uzuhashi
,
Tetsuo Narita
,
Kacper Sierakowski
,
Shoji Ishibashi
,
Shigefusa F. Chichibu
,
Michal Bockowski
,
Jun Suda
,
Tadakatsu Ohokubo
,
Nobuyuki Ikarashi
,
Kazuhiro Hono
, and
Tetsu Kachi
Journal:
Proceedings of SPIE - The International Society for Optical Engineering
Date Uploaded:
04/10/2023
Date Modified:
04/10/2023
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
Description/Abstract:
We used atomic-scale direct observations by transmission electron microscopy (TEM) and atom probe tomography to clarify the crystallograp...
Keyword:
atom probe tomography
,
gallium nitride
, and
transmission electron microscopy
Resource Type:
Article
Author:
Emi Kano
,
Keita Kataoka
,
Jun Uzuhashi
,
Kenta Chokawa
,
Hideki Sakurai
,
Akira Uedono
,
Tetsuo Narita
,
Kacper Sierakowski
,
Michal Bockowski
,
Ritsuo Otsuki
,
Koki Kobayashi
,
Yuta Itoh
,
Masahiro Nagao
,
Tadakatsu Ohkubo
,
Kazuhiro Hono
,
Jun Suda
,
Tetsu Kachi
, and
Nobuyuki Ikarashi
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
28/09/2023
Date Modified:
28/09/2023
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gallium nitride
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III-V nitride semiconductor
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English
5
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IOP Publishing
2
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1
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1
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5
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Rights Statement Sim
Creative Commons BY Attribution 4.0 International
2
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2
Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
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Author
Akira Uedono
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Jun Suda
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Tetsu Kachi
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Tetsuo Narita
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National Institute for Materials Science
1
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JOURNAL OF APPLIED PHYSICS
2
Japanese Journal of Applied Physics
2
Proceedings of SPIE - The International Society for Optical Engineering
1