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Filtering by: Author Jiangwei Liu Author Tokuyuki Teraji Journal IEEE Transactions on Electron Devices Rights Statement Sim In Copyright

1. Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs

Description/Abstract:: In this work, we focus on resolving one of great issues of high threshold voltage (VTH) values for the boron-doped diamond (B-diamond) m...
Keyword:: Boron-doped diamond
Resource Type:: Article
Author:: Jiangwei Liu, Tokuyuki Teraji, Bo Da, and Yasuo Koide
Journal:: IEEE Transactions on Electron Devices
Date Uploaded:: 19/03/2024