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Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs
MDR Open Deposited
In this work, we focus on resolving one of great issues of high threshold voltage (VTH) values for the boron-doped diamond (B-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) reported by now. The VTH for the B-diamond MOSFETs can be further decreased by reducing B-diamond epitaxial layer thickness, boron doping concentration, and thickness of oxide insulator. Three MOSFETs with different device structures are fabricated on the same oxygen-terminated B-diamond channel. The VTH values are lower than 3.4 V with the lowest one of 0.8 V. They are much lower than the previous reports values.
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- 30/01/2024
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- J. Liu, T. Teraji, B. Da and Y. Koide, "Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs," in IEEE Transactions on Electron Devices, vol. 71, no. 3, pp. 1764-1768, March 2024, doi: 10.1109/TED.2024.3356468.
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- Author's original (Preprint)
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