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631% room temperature tunnel magnetoresistance with large oscillation effect in CoFe/M...
Observation of charge-to-spin conversion with giant efficiency at Ni0.8Fe0.2/Bi2WO6 in...
Fast electron damage mechanism of epoxy resin studied by electron energy loss spectros...
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implante...
Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annea...
Sorption-induced static mode nanomechanical sensing with viscoelastic receptor layers ...
Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
Evaluation of dielectric function models for calculation of electron inelastic mean fr...
Thermal stability investigation for Ohmic contact properties of Pt, Au, and Pd electro...
Combination of recommender system and single-particle diagnosis for accelerated discov...
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32
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HVPE
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Ga2O3
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gallium nitride
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α-Ga2O3
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ELO
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English
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AIP Publishing
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Rights Statement Sim
Creative Commons BY Attribution 4.0 International
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In Copyright
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Material/Specimen
nitrides
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Date
2018
2
Author
Yuichi Oshima
6
Tadakatsu Ohkubo
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Jun Uzuhashi
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Ken-ichi Uchida
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Ashutosh Kumar
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Japan Society for the Promotion of Science
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Core Research for Evolutional Science and Technology
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Exploratory Research for Advanced Technology
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JST
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Ministry of Education, Culture, Sports, Science and Technology
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JOURNAL OF APPLIED PHYSICS
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APPLIED PHYSICS LETTERS
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APL Materials
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Applied Physics Letters
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The Journal of Chemical Physics
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