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Filtering by: Author Encarnación G. Víllora Author Satoshi Yamamoto Author Yuichi Oshima Rights Statement Sim In Copyright

1. Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy

Description/Abstract:: The halide vapor phase epitaxy of e-Ga2O3 is demonstrated for the first time. The e-Ga2O3 films are grown on GaN (0001), AlN (0001), and ...
Keyword:: HVPE, ε-Ga2O3, and κ-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Encarnación G. Víllora, Yoshitaka Matsushita, Satoshi Yamamoto, and Kiyoshi Shimamura
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 30/01/2024
Date Modified:: 01/02/2024