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Encarnaciόn G. Vίllora
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Yuichi Oshima
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Elsevier BV
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Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0001) substrates by Halide Vapor Phase Epitaxy
Description/Abstract:
We demonstrate the high-speed growth of b-Ga2O3 epilayers on off-angled sapphire (0001) substrates by the halide vapor epitaxy. (-201) or...
Keyword:
heteroepitaxy
and
β-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Encarnaciόn G. Vίllora
, and
Kiyoshi Shimamura
Journal:
JOURNAL OF CRYSTAL GROWTH
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
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heteroepitaxy
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β-Ga2O3
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English
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Elsevier BV
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Rights Statement Sim
Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
1
Author
Encarnaciόn G. Vίllora
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Kiyoshi Shimamura
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Yuichi Oshima
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Journal
JOURNAL OF CRYSTAL GROWTH
1