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Applied Physics Express
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Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
Growth dynamics of selective-area-grown rutile-type SnO2 on TiO2 (110) substrate
Interpretation of time-dependent current and resistance of HTS closed loop with superc...
Rutile-type GexSn1−xO2 alloy layers lattice-matched to TiO2 substrates for device appl...
Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral o...
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
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Ga2O3
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SnO2
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selective area growth
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ELO
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English
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IOP Publishing
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Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
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Takayoshi Oshima
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Yuichi Oshima
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Hitoshi Takane
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Katsuhisa Tanaka
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Kentaro Kaneko
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JST-Mirai Program
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Japan Science and Technology Agency (JST), the Establishment of University Fellowships toward the Creation of Science and Technology Innovation
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Japan Society for the Promotion of Science
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the Nippon Sheet Glass Foundation for Materials Science and Engineering
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Journal
Applied Physics Express
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