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JAPANESE JOURNAL OF APPLIED PHYSICS
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Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs inter...
In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through ...
Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography
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ELO
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Takayoshi Oshima
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Katsuaki Kawara
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Takashi Shinohe
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Yuichi Oshima
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Akihiro Ohtake
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JAPANESE JOURNAL OF APPLIED PHYSICS
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Japanese Journal of Applied Physics
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