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Filtering by: Author Tokuyuki Teraji Journal IEEE Transactions on Electron Devices Language English Publisher Institute of Electrical and Electronics Engineers (IEEE) Rights Statement Sim In Copyright

1. Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs

Description/Abstract:: In this work, we focus on resolving one of great issues of high threshold voltage (VTH) values for the boron-doped diamond (B-diamond) m...
Keyword:: Boron-doped diamond
Resource Type:: Article
Author:: Jiangwei Liu, Tokuyuki Teraji, Bo Da, and Yasuo Koide
Journal:: IEEE Transactions on Electron Devices
Date Uploaded:: 19/03/2024

1. Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs

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1. Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs

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