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1. Halide Vapor Phase Epitaxy of twin-free a-Ga2O3 on sapphire (0001) substrates

Description/Abstract:: The halide vapor phase epitaxy of a-Ga2O3 is demonstrated for the first time. The films are twin-free, heteroepitaxially grown on sapphir...
Keyword:: HVPE and α-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Encarnación G. Víllora, and Kiyoshi Shimamura
Journal:: APPLIED PHYSICS EXPRESS
Date Uploaded:: 22/01/2024
Date Modified:: 22/01/2024

2. Composition determination of beta-(AlxGa1-x)2O3 layers coherently grown on (010) beta-Ga2O3 substrates by high-resolution x-ray diffraction

Description/Abstract:: We demonstrate x-ray diffraction based composition estimation of b-(AlxGa1-x)2O3 coherently grown on (010) b-Ga2O3. The relation between ...
Keyword:: atom probe, composition, and β-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Elaheh Ahmadi, Stefan C. Badescu, Feng Wu, and James S. Speck
Journal:: APPLIED PHYSICS EXPRESS
Date Uploaded:: 11/01/2024
Date Modified:: 24/01/2024