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Filtering by: Author Tatsuo Fukuda Journal Applied Physics Letters Publisher AIP Publishing Rights Statement Sim In Copyright

1. Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)

Description/Abstract:: Snドープ β-Ga2O3(001)のドーパントの原子位置を光電子ホログラフィ法により明らかにした。
Keyword:: Ga2O3, b-Ga2O3, and dopant
Resource Type:: Article
Author:: Yuhua Tsai, Masaaki Kobata, Tatsuo Fukuda, Hajime Tanida, Toru Kobayashi, and Yoshiyuki Yamashita
Journal:: Applied Physics Letters
Date Uploaded:: 19/03/2024