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Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties

Description/Abstract:

We investigated the effect of supply conditions of GaCl, O2, and additional HCl on the growth rate of (0001) alpha-Ga2O3 by halide vapor ...

Keyword:

HVPE and α-Ga2O3

Resource Type:

Article

Author:

Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, and Takashi Shinohe

Journal:

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Date Uploaded:

22/01/2024

Date Modified:

23/01/2024
Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam epitaxy

Description/Abstract:

We investigated the growth characteristics of homoepitaxial (001) b-Ga2O3 by plasma-assisted molecular beam epitaxy.

Keyword:

MBE and β-Ga2O3

Resource Type:

Article

Author:

Yuichi Oshima, Elaheh Ahmadi, Stephen Kaun, Feng Wu, and James S Speck

Journal:

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Date Uploaded:

22/01/2024

Date Modified:

23/01/2024