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Filtering by: Author Yuichi Oshima Journal Applied Physics Express Publisher IOP Publishing

1. Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy

Description/Abstract:: We demonstrate that dislocation density in α-Ga2O3 epilayers is remarkably reduced via rapid growth at low temperatures by halide vapor p...
Keyword:: HVPE, dislocation, and α-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Hiroyuki Ando, and Takashi Shinohe
Journal:: Applied Physics Express
Date Uploaded:: 22/06/2024

2. Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate

Description/Abstract:: We demonstrated the effectiveness of plasma-free HCl gas etching on a SiO2-masked (010) β-Ga2O3 substrate. The etching process proceeded ...
Keyword:: Ga2O3 and HCl gas etching
Resource Type:: Article
Author:: Takayoshi Oshima and Yuichi Oshima
Journal:: Applied Physics Express
Date Uploaded:: 14/06/2024

3. Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral overgrowth

Description/Abstract:: We demonstrated the double layered epitaxial lateral overgrowth (ELO) of α-Ga2O3 by halide vapor phase epitaxy. Patterned masks were prep...
Keyword:: ELO, dislocation, and α-Ga2O3
Resource Type:: Article
Author:: Katsuaki Kawara, Yuichi Oshima, Mitsuru Okigawa, and Takashi Shinohe
Journal:: Applied Physics Express
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024

4. Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy

Description/Abstract:: We demonstrated selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy on SiO2-masked (001) and (010) β-Ga2O3 substrate...
Keyword:: Ga2O3 and selective area growth
Resource Type:: Article
Author:: Takayoshi Oshima and Yuichi Oshima
Journal:: Applied Physics Express
Date Uploaded:: 28/11/2023
Date Modified:: 28/11/2023