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Huanying Sun
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Advanced Science
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High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond
Description/Abstract:
Here, electronic-grade phosphorus-doped n-type diamond epilayer with anatomically flat surface based on step-flow nucleation mode is fabr...
Keyword:
Diamond, n-type, MOSFET
Resource Type:
Article
Author:
Meiyong Liao
,
Huanying Sun
, and
Satoshi Koizumi
Journal:
Advanced Science
Date Uploaded:
09/04/2024
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Keyword
Diamond, n-type, MOSFET
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English
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Wiley
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Creative Commons BY Attribution 4.0 International
1
Author
Huanying Sun
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1
Meiyong Liao
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Satoshi Koizumi
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Japan Society for the Promotion of Science
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Journal
Advanced Science
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1