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Tadakatsu Ohkubo
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IEEE
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1.
Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs
Description/Abstract:
GaN has attracted attention as a semiconductor material for next-generation power switching devices. Vertical-type GaN devices with MOS g...
Keyword:
atom probe tomography
,
gallium nitride
, and
transmission electron microscopy
Resource Type:
ProceedingsArticle
Author:
Ryo Tanaka
,
Shinya Takashima
,
Katsunori Ueno
,
Masahiro Horita
,
Jun Suda
,
Jun Uzuhashi
,
Tadakatsu Ohkubo
, and
Masaharu Edo
Date Uploaded:
19/04/2024
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atom probe tomography
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gallium nitride
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transmission electron microscopy
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IEEE
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Creative Commons BY Attribution 4.0 International
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Jun Suda
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Jun Uzuhashi
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Katsunori Ueno
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