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Kazuhiro Hono
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Tadakatsu Ohkubo
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1.
Heating rate dependence of coercivity and microstructure of Fe–B–P–Cu nanocrystalline soft magnetic materials
Description/Abstract:
The nanocrystalline structure and soft magnetic properties of melt-spun Fe-B-P-Cu ribbons are largely influenced by heating rates for cry...
Keyword:
atom probe tomography
Resource Type:
Article
Author:
Yohei Nomura
,
Jun Uzuhashi
,
Tatsuya Tomita
,
Toru Takahashi
,
Hidenori Kuwata
,
Taichi Abe
,
Tadakatsu Ohkubo
, and
Kazuhiro Hono
Journal:
Journal of Alloys and Compounds
Date Uploaded:
29/03/2024
2.
Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells
Description/Abstract:
The compositional and structural investigations of threading dislocations (TDs) in InGaN/GaN multiple quantum wells were carried out usin...
Keyword:
InGaN
,
atom probe tomography
,
dislocation
,
pipe diffusion
, and
transmission electron microscopy
Resource Type:
Article
Author:
Yudai Yamaguchi
,
Yuya Kanitani
,
Yoshihiro Kudo
,
Jun Uzuhashi
,
Tadakatsu Ohkubo
,
Kazuhiro Hono
, and
Shigetaka Tomiya
Journal:
NANO LETTERS
Date Uploaded:
04/10/2023
Date Modified:
04/10/2023
3.
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
Description/Abstract:
We used atomic-scale direct observations by transmission electron microscopy (TEM) and atom probe tomography to clarify the crystallograp...
Keyword:
atom probe tomography
,
gallium nitride
, and
transmission electron microscopy
Resource Type:
Article
Author:
Emi Kano
,
Keita Kataoka
,
Jun Uzuhashi
,
Kenta Chokawa
,
Hideki Sakurai
,
Akira Uedono
,
Tetsuo Narita
,
Kacper Sierakowski
,
Michal Bockowski
,
Ritsuo Otsuki
,
Koki Kobayashi
,
Yuta Itoh
,
Masahiro Nagao
,
Tadakatsu Ohkubo
,
Kazuhiro Hono
,
Jun Suda
,
Tetsu Kachi
, and
Nobuyuki Ikarashi
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
28/09/2023
Date Modified:
28/09/2023
4.
Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
Description/Abstract:
An area selective doping via ion implantation is a key technology to realize gallium nitride (GaN) based energy-efficient power devices; ...
Keyword:
atom probe tomography
,
cathodoluminescence
,
gallium nitride
,
implantation
, and
scanning transmission electron microscopy
Resource Type:
Article
Author:
Jun Uzuhashi
,
Jun Chen
,
Ashutosh Kumar
,
Wei Yi
,
Tadakatsu Ohkubo
,
Ryo Tanaka
,
Shinya Takashima
,
Masaharu Edo
,
Kacper Sierakowski
,
Michal Bockowski
,
Hideki Sakurai
,
Tetsu Kachi
,
Takashi Sekiguchi
, and
Kazuhiro Hono
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
04/07/2023
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4
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Creative Commons BY Attribution 4.0 International
2
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Journal of Alloys and Compounds
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