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Large voltage-controlled magnetic anisotropy effect in magnetic tunnel junctions prepa...
631% room temperature tunnel magnetoresistance with large oscillation effect in CoFe/M...
Observation of charge-to-spin conversion with giant efficiency at Ni0.8Fe0.2/Bi2WO6 in...
Fast electron damage mechanism of epoxy resin studied by electron energy loss spectros...
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implante...
Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annea...
Sorption-induced static mode nanomechanical sensing with viscoelastic receptor layers ...
Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
Evaluation of dielectric function models for calculation of electron inelastic mean fr...
Thermal stability investigation for Ohmic contact properties of Pt, Au, and Pd electro...
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33
Keyword
HVPE
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Ga2O3
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gallium nitride
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α-Ga2O3
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ELO
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English
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AIP Publishing
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Rights Statement Sim
Creative Commons BY Attribution 4.0 International
18
In Copyright
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Material/Specimen
nitrides
1
Date
2018
2
Author
Yuichi Oshima
6
Tadakatsu Ohkubo
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Jun Uzuhashi
4
Ken-ichi Uchida
4
Ashutosh Kumar
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http://rightsstatements.org/vocab/InC/1.0/
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Japan Society for the Promotion of Science
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Core Research for Evolutional Science and Technology
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Exploratory Research for Advanced Technology
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JST
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Ministry of Education, Culture, Sports, Science and Technology
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JOURNAL OF APPLIED PHYSICS
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APPLIED PHYSICS LETTERS
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Applied Physics Letters
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APL Materials
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The Journal of Chemical Physics
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