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Filtering by: Author Kiyoshi Shimamura Author Satoshi Yamamoto Journal JOURNAL OF APPLIED PHYSICS Rights Statement Sim In Copyright

Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy

Description/Abstract:

The halide vapor phase epitaxy of e-Ga2O3 is demonstrated for the first time. The e-Ga2O3 films are grown on GaN (0001), AlN (0001), and ...

Keyword:

HVPE, ε-Ga2O3, and κ-Ga2O3

Resource Type:

Article

Author:

Yuichi Oshima, Encarnación G. Víllora, Yoshitaka Matsushita, Satoshi Yamamoto, and Kiyoshi Shimamura

Journal:

JOURNAL OF APPLIED PHYSICS

Date Uploaded:

30/01/2024

Date Modified:

01/02/2024