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APPLIED PHYSICS LETTERS
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Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
Zero-magnetic-field operation of ordinary-Nernst-effect-based transverse thermoelectri...
Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3...
Gate-modulated reflectance spectroscopy for detecting excitonic states in two-dimensio...
631% room temperature tunnel magnetoresistance with large oscillation effect in CoFe/M...
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2D materials
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Ga2O3
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Journal
APPLIED PHYSICS LETTERS
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