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JAPANESE JOURNAL OF APPLIED PHYSICS
Remove constraint Journal: JAPANESE JOURNAL OF APPLIED PHYSICS
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Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers
Description/Abstract:
Molecular-beam epitaxy of InSb on the (111)A-oriented GaAs substrates has been studied using electron diffraction, x-ray diffraction, and...
Keyword:
GaAs
,
InAs
,
InSb
,
Metamorphic
, and
Molecular beam epitaxy
Resource Type:
Article
Author:
Akihiro Ohtake
and
Takaaki Mano
Journal:
Japanese Journal of Applied Physics
and
JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:
13/02/2024
In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism
Description/Abstract:
The present work demonstrates a new technique to solve the in-plane rotational domain problem. In the technique, κ-Ga2O3 was grown by epi...
Keyword:
ELO
,
HVPE
,
domain
,
ε-Ga2O3
, and
κ-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Katsuaki Kawara
,
Takayoshi Oshima
, and
Takashi Shinohe
Journal:
JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Description/Abstract:
We investigated the effect of mask materials on the epitaxial lateral overgrowth (ELO) characteristics of alpha-Ga2O3 and developed an EL...
Keyword:
ELO
,
HVPE
, and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Katsuaki Kawara
,
Takayoshi Oshima
,
Mitsuru Okigawa
, and
Takashi Shinohe
Journal:
JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography
Description/Abstract:
β-Ga2O3 has not been patterned using backside-exposure lithography, despite its high potential applications in future power electronics a...
Keyword:
Ga2O3
and
lithography
Resource Type:
Article
Author:
Takayoshi Oshima
Journal:
JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:
17/01/2024
Date Modified:
24/01/2024
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ELO
2
HVPE
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GaAs
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English
4
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IOP Publishing
4
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4
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4
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3
Creative Commons BY Attribution 4.0 International
1
Author
Takayoshi Oshima
3
Katsuaki Kawara
2
Takashi Shinohe
2
Yuichi Oshima
2
Akihiro Ohtake
1
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JAPANESE JOURNAL OF APPLIED PHYSICS
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Japanese Journal of Applied Physics
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