Index Catalog // MDR

Description/Abstract:: We demonstrated the epitaxial lateral overgrowth of (-1012) (r-plane) α-Ga2O3 using striped mask pattern along <-12-10>. α-Ga2O3 st...
Keyword:: ELO, HVPE, dislocation, and α-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Shingo Yagyu, and Takashi Shinohe
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 30/01/2024
Date Modified:: 01/02/2024

Description/Abstract:: Threading dislocations in a heteroepitaxial α-Ga2O3 film was visualized as etch pits on the surface. We found that etch pits were formed ...
Keyword:: dislocation, etching, and α-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Shingo Yagyu, and Takashi Shinohe
Journal:: JOURNAL OF CRYSTAL GROWTH
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024

Description/Abstract:: We demonstrated the double layered epitaxial lateral overgrowth (ELO) of α-Ga2O3 by halide vapor phase epitaxy. Patterned masks were prep...
Keyword:: ELO, dislocation, and α-Ga2O3
Resource Type:: Article
Author:: Katsuaki Kawara, Yuichi Oshima, Mitsuru Okigawa, and Takashi Shinohe
Journal:: Applied Physics Express
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024

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