GaN has attracted attention as a semiconductor material for next-generation power switching devices. Vertical-type GaN devices with MOS g...

We used atomic-scale direct observations by transmission electron microscopy (TEM) and atom probe tomography to clarify the crystallograp...

Here, we investigate the effects of O2:N2 (1:1) as ambient gas as compared with pure N2 during activation annealing of Mg as p-type dopin...

An area selective doping via ion implantation is a key technology to realize gallium nitride (GaN) based energy-efficient power devices; ...