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Yuichi Oshima
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Applied Physics Express
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Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral overgrowth
Description/Abstract:
We demonstrated the double layered epitaxial lateral overgrowth (ELO) of α-Ga2O3 by halide vapor phase epitaxy. Patterned masks were prep...
Keyword:
ELO
,
dislocation
, and
α-Ga2O3
Resource Type:
Article
Author:
Katsuaki Kawara
,
Yuichi Oshima
,
Mitsuru Okigawa
, and
Takashi Shinohe
Journal:
Applied Physics Express
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
Description/Abstract:
We demonstrated selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy on SiO2-masked (001) and (010) β-Ga2O3 substrate...
Keyword:
Ga2O3
and
selective area growth
Resource Type:
Article
Author:
Takayoshi Oshima
and
Yuichi Oshima
Journal:
Applied Physics Express
Date Uploaded:
28/11/2023
Date Modified:
28/11/2023
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ELO
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Ga2O3
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dislocation
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selective area growth
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α-Ga2O3
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English
2
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IOP Publishing
2
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2
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open
2
Rights Statement Sim
Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
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1
Author
Yuichi Oshima
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2
Katsuaki Kawara
1
Mitsuru Okigawa
1
Takashi Shinohe
1
Takayoshi Oshima
1
Journal
Applied Physics Express
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