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Yuichi Oshima
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Elsevier BV
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Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas etching
Description/Abstract:
Threading dislocations in a heteroepitaxial α-Ga2O3 film was visualized as etch pits on the surface. We found that etch pits were formed ...
Keyword:
dislocation
,
etching
, and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Shingo Yagyu
, and
Takashi Shinohe
Journal:
JOURNAL OF CRYSTAL GROWTH
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0001) substrates by Halide Vapor Phase Epitaxy
Description/Abstract:
We demonstrate the high-speed growth of b-Ga2O3 epilayers on off-angled sapphire (0001) substrates by the halide vapor epitaxy. (-201) or...
Keyword:
heteroepitaxy
and
β-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Encarnaciόn G. Vίllora
, and
Kiyoshi Shimamura
Journal:
JOURNAL OF CRYSTAL GROWTH
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
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dislocation
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etching
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heteroepitaxy
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α-Ga2O3
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β-Ga2O3
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English
2
Publisher
Elsevier BV
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Rights Statement Sim
Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
2
Author
Yuichi Oshima
[remove]
2
Encarnaciόn G. Vίllora
1
Kiyoshi Shimamura
1
Shingo Yagyu
1
Takashi Shinohe
1
Journal
JOURNAL OF CRYSTAL GROWTH
2