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Takayoshi Oshima
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Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
Growth dynamics of selective-area-grown rutile-type SnO2 on TiO2 (110) substrate
Rutile-type GexSn1−xO2 alloy layers lattice-matched to TiO2 substrates for device appl...
Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precur...
In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through ...
Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire
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Ga2O3
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HVPE
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SnO2
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English
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Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
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Creative Commons BY Attribution 4.0 International
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Author
Takayoshi Oshima
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Yuichi Oshima
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Katsuaki Kawara
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Takashi Shinohe
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Hitoshi Takane
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Japan Science and Technology Agency (JST), the Establishment of University Fellowships toward the Creation of Science and Technology Innovation
1
The Murata Science Foundation
1
the Nippon Sheet Glass Foundation for Materials Science and Engineering
1
日本板硝子材料工学助成会
1
科研費
1
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Applied Physics Express
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JAPANESE JOURNAL OF APPLIED PHYSICS
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APPLIED PHYSICS EXPRESS
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APPLIED PHYSICS LETTERS
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SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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