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Applied Physics Express
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Growth dynamics of selective-area-grown rutile-type SnO2 on TiO2 (110) substrate
Description/Abstract:
We demonstrated selective-area growth of r-SnO2 on a SiO2-masked r-TiO2 (110) substrate. The heteroepitaxy on a window started with a Vol...
Keyword:
SnO2
and
selective area growth
Resource Type:
Article
Author:
Hitoshi Takane
,
Takayoshi Oshima
,
Katsuhisa Tanaka
, and
Kentaro Kaneko
Journal:
Applied Physics Express
Date Uploaded:
13/04/2024
Interpretation of time-dependent current and resistance of HTS closed loop with superconducting joint considering flux creep
Description/Abstract:
A low circuit resistance is required for a superconducting magnet operated in persistent mode using superconducting joints. We performed ...
Keyword:
Superconducting joint
Resource Type:
Article
Author:
Yasuaki Takeda
,
Yuji Tsuchiya
, and
Gen Nishijima
Journal:
Applied Physics Express
Date Uploaded:
05/04/2024
Rutile-type GexSn1−xO2 alloy layers lattice-matched to TiO2 substrates for device applications
Description/Abstract:
We report the characterization and application of mist-CVD-grown rutile-structured GexSn1−xO2 (x = ∼0.53) films lattice-matched to isostr...
Keyword:
GeO2
,
SnO2
, and
TiO2
Resource Type:
Article
Author:
Hitoshi Takane
,
Takayoshi Oshima
,
Takayuki Harada
,
Kentaro Kaneko
, and
Katsuhisa Tanaka
Journal:
Applied Physics Express
Date Uploaded:
30/01/2024
Date Modified:
01/02/2024
Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral overgrowth
Description/Abstract:
We demonstrated the double layered epitaxial lateral overgrowth (ELO) of α-Ga2O3 by halide vapor phase epitaxy. Patterned masks were prep...
Keyword:
ELO
,
dislocation
, and
α-Ga2O3
Resource Type:
Article
Author:
Katsuaki Kawara
,
Yuichi Oshima
,
Mitsuru Okigawa
, and
Takashi Shinohe
Journal:
Applied Physics Express
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
Description/Abstract:
We demonstrated selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy on SiO2-masked (001) and (010) β-Ga2O3 substrate...
Keyword:
Ga2O3
and
selective area growth
Resource Type:
Article
Author:
Takayoshi Oshima
and
Yuichi Oshima
Journal:
Applied Physics Express
Date Uploaded:
28/11/2023
Date Modified:
28/11/2023
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5
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IOP Publishing
5
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5
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5
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Creative Commons BY Attribution 4.0 International
2
Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
2
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1
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Takayoshi Oshima
3
Hitoshi Takane
2
Katsuhisa Tanaka
2
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Funder
JST-Mirai Program
1
Japan Science and Technology Agency (JST), the Establishment of University Fellowships toward the Creation of Science and Technology Innovation
1
Japan Society for the Promotion of Science
1
the Nippon Sheet Glass Foundation for Materials Science and Engineering
1
日本板硝子材料工学助成会
1
Journal
Applied Physics Express
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