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Antenna-enhanced high-resistance photovoltaic infrared detectors based on quantum ratc...
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
Near-infrared imaging of heat transfer behavior between gadolinium and fluid during ma...
Designing composition ratio of magnetic alloy multilayer for transverse thermoelectric...
Zero-magnetic-field operation of ordinary-Nernst-effect-based transverse thermoelectri...
Enhanced orbital torque efficiency in nonequilibrium Ru50Mo50(0001) alloy epitaxial th...
Study of device characteristics of intrinsic Josephson junction terahertz emitters rel...
Optimum asymmetry for nanofabricated refractometric sensors at quasi-bound states in t...
Local defect and mid-gap state analysis of GaN using monochromated EELS combined with ...
Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)
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HVPE
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Ga2O3
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gallium nitride
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α-Ga2O3
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AIP Publishing
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Rights Statement Sim
Creative Commons BY Attribution 4.0 International
18
In Copyright
14
Material/Specimen
nitrides
1
Date
2018
2
Author
Yuichi Oshima
6
Tadakatsu Ohkubo
5
Jun Uzuhashi
4
Ken-ichi Uchida
4
Ashutosh Kumar
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Japan Society for the Promotion of Science
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Core Research for Evolutional Science and Technology
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Exploratory Research for Advanced Technology
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JST
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Ministry of Education, Culture, Sports, Science and Technology
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JOURNAL OF APPLIED PHYSICS
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APPLIED PHYSICS LETTERS
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Applied Physics Letters
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APL Materials
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The Journal of Chemical Physics
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