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Jun Uzuhashi
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Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pr...
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implante...
Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
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gallium nitride
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atom probe tomography
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cathodoluminescence
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JOURNAL OF APPLIED PHYSICS
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Proceedings of SPIE - The International Society for Optical Engineering
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