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Filtering by: Journal Applied Physics Express Keyword dislocation Publisher IOP Publishing

1. Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy

Description/Abstract:: We demonstrate that dislocation density in α-Ga2O3 epilayers is remarkably reduced via rapid growth at low temperatures by halide vapor p...
Keyword:: HVPE, dislocation, and α-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Hiroyuki Ando, and Takashi Shinohe
Journal:: Applied Physics Express
Date Uploaded:: 22/06/2024

2. Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral overgrowth

Description/Abstract:: We demonstrated the double layered epitaxial lateral overgrowth (ELO) of α-Ga2O3 by halide vapor phase epitaxy. Patterned masks were prep...
Keyword:: ELO, dislocation, and α-Ga2O3
Resource Type:: Article
Author:: Katsuaki Kawara, Yuichi Oshima, Mitsuru Okigawa, and Takashi Shinohe
Journal:: Applied Physics Express
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024