Index Catalog // MDR

Skip to Content

Home
About
Help
Contact
Login

Search MDR

Search Constraints

Start Over

Filtering by: Author Katsuaki Kawara Remove constraint Author: Katsuaki Kawara Rights Statement Sim In Copyright Remove constraint Rights Statement Sim: In Copyright

1 - 4 of 4

relevance
date uploaded ▼
date uploaded ▲
date modified ▼
date modified ▲

Number of results to display per page

10 per page
20 per page
50 per page
100 per page

View results as:

List Gallery Masonry Slideshow

Search Results

Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties

Description/Abstract:

We investigated the effect of supply conditions of GaCl, O2, and additional HCl on the growth rate of (0001) alpha-Ga2O3 by halide vapor ...

Keyword:

HVPE and α-Ga2O3

Resource Type:

Article

Author:

Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, and Takashi Shinohe

Journal:

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Date Uploaded:

22/01/2024

Date Modified:

23/01/2024
In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism

Description/Abstract:

The present work demonstrates a new technique to solve the in-plane rotational domain problem. In the technique, κ-Ga2O3 was grown by epi...

Keyword:

ELO, HVPE, domain, ε-Ga2O3, and κ-Ga2O3

Resource Type:

Article

Author:

Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, and Takashi Shinohe

Journal:

JAPANESE JOURNAL OF APPLIED PHYSICS

Date Uploaded:

22/01/2024

Date Modified:

23/01/2024
Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

Description/Abstract:

We investigated the effect of mask materials on the epitaxial lateral overgrowth (ELO) characteristics of alpha-Ga2O3 and developed an EL...

Keyword:

ELO, HVPE, and α-Ga2O3

Resource Type:

Article

Author:

Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, and Takashi Shinohe

Journal:

JAPANESE JOURNAL OF APPLIED PHYSICS

Date Uploaded:

22/01/2024

Date Modified:

23/01/2024
Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral overgrowth

Description/Abstract:

We demonstrated the double layered epitaxial lateral overgrowth (ELO) of α-Ga2O3 by halide vapor phase epitaxy. Patterned masks were prep...

Keyword:

ELO, dislocation, and α-Ga2O3

Resource Type:

Article

Author:

Katsuaki Kawara, Yuichi Oshima, Mitsuru Okigawa, and Takashi Shinohe

Journal:

Applied Physics Express

Date Uploaded:

22/01/2024

Date Modified:

23/01/2024

Limit your search

Type of work

Publication4

Keyword

ELO3
HVPE3
α-Ga2O33
dislocation1
domain1
more Keywords »

Language

English4

Publisher

IOP Publishing4

Resource type

Article4

Visibility

open4

Rights Statement Sim

In Copyright[remove]4

Author

Katsuaki Kawara[remove]4
Takashi Shinohe4
Yuichi Oshima4
Mitsuru Okigawa3
Takayoshi Oshima3

Journal

JAPANESE JOURNAL OF APPLIED PHYSICS2
Applied Physics Express1
SEMICONDUCTOR SCIENCE AND TECHNOLOGY1

National Institute for Materials Science

Research Network and Facility Services Division (RNFS)
Materials Data Platform

© 2020–2024 National Institute for Materials Science. Works are available under licenses specified on their pages.

Terms of Use
Privacy Policy
Data Platform DICE
NIMS Digital Library