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APPLIED PHYSICS LETTERS
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Ga2O3
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1.
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
Description/Abstract:
In this study, we dry etched SiO2-masked (001) b-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The et...
Keyword:
Ga2O3
,
HCl
, and
etching
Resource Type:
Article
Author:
Takayoshi Oshima
and
Yuichi Oshima
Journal:
APPLIED PHYSICS LETTERS
Date Uploaded:
21/11/2023
Date Modified:
27/11/2023
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Ga2O3
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HCl
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etching
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AIP Publishing
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Creative Commons BY Attribution 4.0 International
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Author
Takayoshi Oshima
1
Yuichi Oshima
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Journal
APPLIED PHYSICS LETTERS
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