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Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral overgrowth

Description/Abstract:

We demonstrated the double layered epitaxial lateral overgrowth (ELO) of α-Ga2O3 by halide vapor phase epitaxy. Patterned masks were prep...

Keyword:

ELO, dislocation, and α-Ga2O3

Resource Type:

Article

Author:

Katsuaki Kawara, Yuichi Oshima, Mitsuru Okigawa, and Takashi Shinohe

Journal:

Applied Physics Express

Date Uploaded:

22/01/2024

Date Modified:

23/01/2024