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Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs

Description/Abstract:

GaN has attracted attention as a semiconductor material for next-generation power switching devices. Vertical-type GaN devices with MOS g...

Keyword:

atom probe tomography, gallium nitride, and transmission electron microscopy

Resource Type:

ProceedingsArticle

Author:

Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masahiro Horita, Jun Suda, Jun Uzuhashi, Tadakatsu Ohkubo, and Masaharu Edo

Date Uploaded:

19/04/2024