Molecular-beam epitaxy of InSb on the (111)A-oriented GaAs substrates has been studied using electron diffraction, x-ray diffraction, and...

The present work demonstrates a new technique to solve the in-plane rotational domain problem. In the technique, κ-Ga2O3 was grown by epi...

We investigated the effect of mask materials on the epitaxial lateral overgrowth (ELO) characteristics of alpha-Ga2O3 and developed an EL...

β-Ga2O3 has not been patterned using backside-exposure lithography, despite its high potential applications in future power electronics a...