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Takashi Shinohe
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Yuichi Oshima
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Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperat...
Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along <-12-10...
Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas etching
Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precur...
In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through ...
Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral o...
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α-Ga2O3
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dislocation
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Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
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Takashi Shinohe
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Yuichi Oshima
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Katsuaki Kawara
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Applied Physics Express
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JAPANESE JOURNAL OF APPLIED PHYSICS
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JOURNAL OF CRYSTAL GROWTH
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SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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