Skip to Content
Toggle navigation
Home
About
Help
Contact
Login
Search MDR
Go
Search Constraints
Start Over
Filtering by:
Keyword
GaN
Remove constraint Keyword: GaN
1
-
8
of
8
Sort by relevance
relevance
date uploaded ▼
date uploaded ▲
date modified ▼
date modified ▲
Number of results to display per page
10 per page
10
per page
20
per page
50
per page
100
per page
View results as:
List
Gallery
Masonry
Slideshow
Search Results
Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
Description/Abstract:
For rooting the development of GaN-based optoelectronic devices, understanding the roles of midgap recombination centers (MGRCs), namely ...
Keyword:
GaN
Resource Type:
Article
Author:
Shigefusa F. Chichibu
,
Kohei Shima
,
Akira Uedono
,
Shoji Ishibashi
,
Hiroko Iguchi
,
Tetsuo Narita
,
Keita Kataoka
,
Ryo Tanaka
,
Shinya Takashima
,
Katsunori Ueno
,
Masaharu Edo
,
Hirotaka Watanabe
,
Atsushi Tanaka
,
Yoshio Honda
,
Jun Suda
,
Hiroshi Amano
,
Tetsu Kachi
,
Toshihide Nabatame
,
Yoshihiro Irokawa
, and
Yasuo Koide
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
09/05/2024
Pt/GaN Schottky barrier height lowering by incorporated hydrogen
Description/Abstract:
Changes in the hydrogen-induced Schottky barrier height (ΦB) of Pt/GaN rectifiers fabricated on free-standing GaN substrates were investi...
Keyword:
GaN
,
Schottky barrier height
, and
hydrogen
Resource Type:
Article
Author:
色川 芳宏
,
大井 暁彦
,
生田目 俊秀
, and
小出 康夫
Journal:
ECS Journal of Solid State Science and Technology
Date Uploaded:
10/04/2024
Local defect and mid-gap state analysis of GaN using monochromated EELS combined with nanodiffraction and atomic-resolution imaging
Description/Abstract:
Enhancement of energy resolution due to evolution of monochromators has made electron energy loss spectroscopy (EELS) in transmission ele...
Keyword:
4D-STEM
,
ABF-STEM
,
EELS
,
GaN
,
HAADF-STEM
,
HAXPES
, and
defect
Resource Type:
Article
Author:
Shunsuke Yamashita
,
Sei Fukushima
,
Jun Kikkawa
,
Ryoji Arai
,
Yuya Kanitani
,
Koji Kimoto
, and
Yoshihiro Kudo
Journal:
APL Materials
Date Uploaded:
19/03/2024
Ab-initio phonon calculation for GaN / F-43m (216) / materials id 830
Description/Abstract:
Ab-initio phonon calculation for GaN / F-43m (216) Phonon band structure, phonon DOS, thermal properties at constant volume, and phonon r...
Keyword:
F-43m (216)
,
GaN
, and
Phonon
Resource Type:
Dataset
Data origin:
simulation
Author:
Atsushi Togo
Date Uploaded:
25/05/2023
Ab-initio phonon calculation for GaN / P6_3mc (186) / materials id 804
Description/Abstract:
Ab-initio phonon calculation for GaN / P6_3mc (186) Phonon band structure, phonon DOS, thermal properties at constant volume, and phonon ...
Keyword:
GaN
,
P6_3mc (186)
, and
Phonon
Resource Type:
Dataset
Data origin:
simulation
Author:
Atsushi Togo
Date Uploaded:
25/05/2023
Continuous real-time O 1s core XPS spectra of H2O adsorption on +c Ga-face and m-plane surfaces of GaN
Description/Abstract:
The surface oxidation behavior of different GaN surfaces (the polar Ga-face (+c) and the nonpolar m-plane) under H<sub>2</sub>O vapor amb...
Keyword:
GaN
,
Gallium nitride
,
MOS structure
,
Oxidation
,
SPring-8
,
Surface oxidation
, and
XPS
Resource Type:
Dataset
Data origin:
other
Author:
SUMIYA, Masatomo
Date Uploaded:
14/02/2023
Date Modified:
28/02/2023
Continuous real-time O 1s core XPS spectra of initial O2 molecule adsorption on polar and m-plane surfaces of GaN
Description/Abstract:
The initial adsorption behavior of different GaN surfaces (the polar Ga-face (+c) and N-face (−c) and the nonpolar (101̅0) (m)-plane) und...
Keyword:
Adsorption
,
GaN
,
Gallium nitride
,
Oxidation
,
SPring-8
, and
XPS
Resource Type:
Dataset
Data origin:
other
Author:
SUMIYA, Masatomo
Date Uploaded:
31/01/2023
Date Modified:
28/02/2023
[Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable up to 600 K
Description/Abstract:
A team at MANA has demonstrated a highly temperature-stable GaN resonator that boasts high-frequency stability, high Q factor and the pot...
Keyword:
Strain
,
AlN
,
GaN
,
MEMS
,
NEMS
,
Si
,
energy storage
, and
temperature coefficient of frequency
Resource Type:
Article
Author:
International Center for Materials Nanoarchitectonics (WPI-MANA)
Date Uploaded:
18/12/2022
Date Modified:
19/12/2022
Toggle facets
Limit your search
Type of work
Dataset
4
Publication
4
Collection
MDR phonon calculation database
2
Research Highlights
1
Keyword
GaN
[remove]
8
Gallium nitride
2
Oxidation
2
Phonon
2
SPring-8
2
more
Keywords
»
Language
English
4
Publisher
NIMS
4
AIP Publishing
1
American Institute of Physics
1
Electrochemical Society, Inc.
1
Resource type
Article
4
Dataset
4
Visibility
open
8
Rights Statement Sim
Creative Commons BY Attribution 4.0 International
7
In Copyright
1
Data origin
other
2
simulation
2
Characterization methods
spectroscopy -- x-ray photoelectron spectroscopy
2
Author
Atsushi Togo
2
SUMIYA, Masatomo
2
Akira Uedono
1
Atsushi Tanaka
1
Hiroko Iguchi
1
more
Authors
»
Funder
MEXT
2
Software
VASP
2
phonopy
2
spglib
2
Journal
APL Materials
1
ECS Journal of Solid State Science and Technology
1
JOURNAL OF APPLIED PHYSICS
1