Index Catalog // MDR

Start Over

Filtering by: Author Takayoshi Oshima Type of work Publication Publisher IOP Publishing

1. Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate

Description/Abstract:: We demonstrated the effectiveness of plasma-free HCl gas etching on a SiO2-masked (010) β-Ga2O3 substrate. The etching process proceeded ...
Keyword:: Ga2O3 and HCl gas etching
Resource Type:: Article
Author:: Takayoshi Oshima and Yuichi Oshima
Journal:: Applied Physics Express
Date Uploaded:: 14/06/2024

2. Growth dynamics of selective-area-grown rutile-type SnO2 on TiO2 (110) substrate

Description/Abstract:: We demonstrated selective-area growth of r-SnO2 on a SiO2-masked r-TiO2 (110) substrate. The heteroepitaxy on a window started with a Vol...
Keyword:: SnO2 and selective area growth
Resource Type:: Article
Author:: Hitoshi Takane, Takayoshi Oshima, Katsuhisa Tanaka, and Kentaro Kaneko
Journal:: Applied Physics Express
Date Uploaded:: 13/04/2024

3. Rutile-type GexSn1−xO2 alloy layers lattice-matched to TiO2 substrates for device applications

Description/Abstract:: We report the characterization and application of mist-CVD-grown rutile-structured GexSn1−xO2 (x = ∼0.53) films lattice-matched to isostr...
Keyword:: GeO2, SnO2, and TiO2
Resource Type:: Article
Author:: Hitoshi Takane, Takayoshi Oshima, Takayuki Harada, Kentaro Kaneko, and Katsuhisa Tanaka
Journal:: Applied Physics Express
Date Uploaded:: 30/01/2024
Date Modified:: 01/02/2024

4. Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties

Description/Abstract:: We investigated the effect of supply conditions of GaCl, O2, and additional HCl on the growth rate of (0001) alpha-Ga2O3 by halide vapor ...
Keyword:: HVPE and α-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, and Takashi Shinohe
Journal:: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024

5. In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism

Description/Abstract:: The present work demonstrates a new technique to solve the in-plane rotational domain problem. In the technique, κ-Ga2O3 was grown by epi...
Keyword:: ELO, HVPE, domain, ε-Ga2O3, and κ-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, and Takashi Shinohe
Journal:: JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024

6. Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

Description/Abstract:: We investigated the effect of mask materials on the epitaxial lateral overgrowth (ELO) characteristics of alpha-Ga2O3 and developed an EL...
Keyword:: ELO, HVPE, and α-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, and Takashi Shinohe
Journal:: JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024

7. Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography

Description/Abstract:: β-Ga2O3 has not been patterned using backside-exposure lithography, despite its high potential applications in future power electronics a...
Keyword:: Ga2O3 and lithography
Resource Type:: Article
Author:: Takayoshi Oshima
Journal:: JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 17/01/2024
Date Modified:: 24/01/2024

8. Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy

Description/Abstract:: We demonstrated selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy on SiO2-masked (001) and (010) β-Ga2O3 substrate...
Keyword:: Ga2O3 and selective area growth
Resource Type:: Article
Author:: Takayoshi Oshima and Yuichi Oshima
Journal:: Applied Physics Express
Date Uploaded:: 28/11/2023
Date Modified:: 28/11/2023

9. α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire

Description/Abstract:: Ten-period binary α-Al2O3/Ga2O3 superlattices were fabricated on r-plane sapphire substrates by molecular beam epitaxy. By systematic var...
Keyword:: Ga2O3 and Superlattice
Resource Type:: Article
Author:: Takayoshi Oshima, Yuji Kato, Masataka Imura, Yoshiko Nakayama, and Masaki Takeguchi
Journal:: APPLIED PHYSICS EXPRESS
Date Uploaded:: 28/11/2023
Date Modified:: 28/11/2023

10. Fabrication of coherent γ-Al2O3/Ga2O3 superlattices on MgAl2O4 substrates

Description/Abstract:: We succeeded in fabricating 10-period coherent γ Al2O3/Ga2O3 superlattices (SLs) on MgAl2O4 substrates by molecular beam epitaxy. By vary...
Keyword:: Ga2O3 and Superlattice
Resource Type:: Article
Author:: Yuji Kato, Masataka Imura, Yoshiko Nakayama, Masaki Takeguchi, and Takayoshi Oshima
Journal:: APPLIED PHYSICS EXPRESS
Date Uploaded:: 28/11/2023
Date Modified:: 28/11/2023