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Takayoshi Oshima
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Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
Description/Abstract:
We demonstrated the effectiveness of plasma-free HCl gas etching on a SiO2-masked (010) β-Ga2O3 substrate. The etching process proceeded ...
Keyword:
Ga2O3
and
HCl gas etching
Resource Type:
Article
Author:
Takayoshi Oshima
and
Yuichi Oshima
Journal:
Applied Physics Express
Date Uploaded:
14/06/2024
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
Description/Abstract:
In this study, we dry etched SiO2-masked (001) b-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The et...
Keyword:
Ga2O3
,
HCl
, and
etching
Resource Type:
Article
Author:
Takayoshi Oshima
and
Yuichi Oshima
Journal:
APPLIED PHYSICS LETTERS
Date Uploaded:
28/05/2024
Growth dynamics of selective-area-grown rutile-type SnO2 on TiO2 (110) substrate
Description/Abstract:
We demonstrated selective-area growth of r-SnO2 on a SiO2-masked r-TiO2 (110) substrate. The heteroepitaxy on a window started with a Vol...
Keyword:
SnO2
and
selective area growth
Resource Type:
Article
Author:
Hitoshi Takane
,
Takayoshi Oshima
,
Katsuhisa Tanaka
, and
Kentaro Kaneko
Journal:
Applied Physics Express
Date Uploaded:
13/04/2024
Rutile-type GexSn1−xO2 alloy layers lattice-matched to TiO2 substrates for device applications
Description/Abstract:
We report the characterization and application of mist-CVD-grown rutile-structured GexSn1−xO2 (x = ∼0.53) films lattice-matched to isostr...
Keyword:
GeO2
,
SnO2
, and
TiO2
Resource Type:
Article
Author:
Hitoshi Takane
,
Takayoshi Oshima
,
Takayuki Harada
,
Kentaro Kaneko
, and
Katsuhisa Tanaka
Journal:
Applied Physics Express
Date Uploaded:
30/01/2024
Date Modified:
01/02/2024
Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties
Description/Abstract:
We investigated the effect of supply conditions of GaCl, O2, and additional HCl on the growth rate of (0001) alpha-Ga2O3 by halide vapor ...
Keyword:
HVPE
and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Katsuaki Kawara
,
Takayoshi Oshima
,
Mitsuru Okigawa
, and
Takashi Shinohe
Journal:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism
Description/Abstract:
The present work demonstrates a new technique to solve the in-plane rotational domain problem. In the technique, κ-Ga2O3 was grown by epi...
Keyword:
ELO
,
HVPE
,
domain
,
ε-Ga2O3
, and
κ-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Katsuaki Kawara
,
Takayoshi Oshima
, and
Takashi Shinohe
Journal:
JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Description/Abstract:
We investigated the effect of mask materials on the epitaxial lateral overgrowth (ELO) characteristics of alpha-Ga2O3 and developed an EL...
Keyword:
ELO
,
HVPE
, and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Katsuaki Kawara
,
Takayoshi Oshima
,
Mitsuru Okigawa
, and
Takashi Shinohe
Journal:
JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography
Description/Abstract:
β-Ga2O3 has not been patterned using backside-exposure lithography, despite its high potential applications in future power electronics a...
Keyword:
Ga2O3
and
lithography
Resource Type:
Article
Author:
Takayoshi Oshima
Journal:
JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:
17/01/2024
Date Modified:
24/01/2024
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
Description/Abstract:
We demonstrated selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy on SiO2-masked (001) and (010) β-Ga2O3 substrate...
Keyword:
Ga2O3
and
selective area growth
Resource Type:
Article
Author:
Takayoshi Oshima
and
Yuichi Oshima
Journal:
Applied Physics Express
Date Uploaded:
28/11/2023
Date Modified:
28/11/2023
α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire
Description/Abstract:
Ten-period binary α-Al2O3/Ga2O3 superlattices were fabricated on r-plane sapphire substrates by molecular beam epitaxy. By systematic var...
Keyword:
Ga2O3
and
Superlattice
Resource Type:
Article
Author:
Takayoshi Oshima
,
Yuji Kato
,
Masataka Imura
,
Yoshiko Nakayama
, and
Masaki Takeguchi
Journal:
APPLIED PHYSICS EXPRESS
Date Uploaded:
28/11/2023
Date Modified:
28/11/2023
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Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
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Creative Commons BY Attribution 4.0 International
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Author
Takayoshi Oshima
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Japan Science and Technology Agency (JST), the Establishment of University Fellowships toward the Creation of Science and Technology Innovation
1
The Murata Science Foundation
1
the Nippon Sheet Glass Foundation for Materials Science and Engineering
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日本板硝子材料工学助成会
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Applied Physics Express
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JAPANESE JOURNAL OF APPLIED PHYSICS
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APPLIED PHYSICS EXPRESS
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SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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