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Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway

Description/Abstract:

Amorphous oxide semiconductors (AOSs) with low off-currents and processing temperatures offer promising alternative materials for next-ge...

Keyword:

IGZO, contact resistance, hydrogen, oxide semiconductors, palladium, and thin-film transistors

Resource Type:

Article

Author:

Yuhao Shi, Masatake Tsuji, Hanjun Cho, Shigenori Ueda, Junghwan Kim, and Hideo Hosono

Journal:

ACS Nano

Date Uploaded:

08/04/2024

Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway

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