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Tadakatsu Ohkubo
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Rights Statement Sim
Creative Commons BY Attribution 4.0 International
Remove constraint Rights Statement Sim: Creative Commons BY Attribution 4.0 International
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Enhanced orbital torque efficiency in nonequilibrium Ru50Mo50(0001) alloy epitaxial thin films
Description/Abstract:
Epitaxial thin films of fully nonequilibrium hcp-Ru_50Mo_50(0001) nanoalloys were prepared as a chemically disordered alloy, in which the...
Keyword:
Epitaxial thin films
,
Nonequilibrium
,
Orbital torque
, and
Ru50Mo50(0001)
Resource Type:
Article
Author:
Ke Tang
,
Cong He
,
Zhenchao Wen
,
Hiroaki Sukegawa
,
Tadakatsu Ohkubo
,
Yukio Nozaki
, and
Seiji Mitani
Journal:
APL Materials
Date Uploaded:
13/05/2024
Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs
Description/Abstract:
GaN has attracted attention as a semiconductor material for next-generation power switching devices. Vertical-type GaN devices with MOS g...
Keyword:
atom probe tomography
,
gallium nitride
, and
transmission electron microscopy
Resource Type:
ProceedingsArticle
Author:
Ryo Tanaka
,
Shinya Takashima
,
Katsunori Ueno
,
Masahiro Horita
,
Jun Suda
,
Jun Uzuhashi
,
Tadakatsu Ohkubo
, and
Masaharu Edo
Date Uploaded:
19/04/2024
Large voltage-controlled magnetic anisotropy effect in magnetic tunnel junctions prepared by deposition at cryogenic temperatures
Description/Abstract:
We investigated the influence of the buffer material and a cryogenic temperature deposition process on the voltage-controlled magnetic an...
Keyword:
Spintronics
Resource Type:
Article
Author:
Takayuki Nozaki
,
Tomohiro Ichinose
,
Jun Uzuhashi
,
Tatsuya Yamamoto
,
Makoto Konoto
,
Kay Yakushiji
,
Tadakatsu Ohkubo
, and
Shinji Yuasa
Journal:
APL Materials
Date Uploaded:
10/01/2024
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
Description/Abstract:
We used atomic-scale direct observations by transmission electron microscopy (TEM) and atom probe tomography to clarify the crystallograp...
Keyword:
atom probe tomography
,
gallium nitride
, and
transmission electron microscopy
Resource Type:
Article
Author:
Emi Kano
,
Keita Kataoka
,
Jun Uzuhashi
,
Kenta Chokawa
,
Hideki Sakurai
,
Akira Uedono
,
Tetsuo Narita
,
Kacper Sierakowski
,
Michal Bockowski
,
Ritsuo Otsuki
,
Koki Kobayashi
,
Yuta Itoh
,
Masahiro Nagao
,
Tadakatsu Ohkubo
,
Kazuhiro Hono
,
Jun Suda
,
Tetsu Kachi
, and
Nobuyuki Ikarashi
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
28/09/2023
Date Modified:
28/09/2023
Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing
Description/Abstract:
Here, we investigate the effects of O2:N2 (1:1) as ambient gas as compared with pure N2 during activation annealing of Mg as p-type dopin...
Keyword:
activation
,
gallium nitride
,
scanning transmission electron microscopy
, and
semiconductor
Resource Type:
Article
Author:
Ashutosh Kumar
,
Martin Berg
,
Qin Wang
,
Jun Uzuhashi
,
Tadakatsu Ohkubo
,
Michael Salter
, and
Peter Ramvall
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
28/09/2023
Date Modified:
28/09/2023
Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
Description/Abstract:
An area selective doping via ion implantation is a key technology to realize gallium nitride (GaN) based energy-efficient power devices; ...
Keyword:
atom probe tomography
,
cathodoluminescence
,
gallium nitride
,
implantation
, and
scanning transmission electron microscopy
Resource Type:
Article
Author:
Jun Uzuhashi
,
Jun Chen
,
Ashutosh Kumar
,
Wei Yi
,
Tadakatsu Ohkubo
,
Ryo Tanaka
,
Shinya Takashima
,
Masaharu Edo
,
Kacper Sierakowski
,
Michal Bockowski
,
Hideki Sakurai
,
Tetsu Kachi
,
Takashi Sekiguchi
, and
Kazuhiro Hono
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
04/07/2023
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gallium nitride
4
atom probe tomography
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English
6
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5
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5
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Rights Statement Sim
Creative Commons BY Attribution 4.0 International
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Author
Tadakatsu Ohkubo
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5
Ashutosh Kumar
2
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Japan Science and Technology Agency
1
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