In this study, we dry etched SiO2-masked (001) b-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The et...

We demonstrated selective-area growth of r-SnO2 on a SiO2-masked r-TiO2 (110) substrate. The heteroepitaxy on a window started with a Vol...

We report the characterization and application of mist-CVD-grown rutile-structured GexSn1−xO2 (x = ∼0.53) films lattice-matched to isostr...

We investigated the effect of supply conditions of GaCl, O2, and additional HCl on the growth rate of (0001) alpha-Ga2O3 by halide vapor ...

The present work demonstrates a new technique to solve the in-plane rotational domain problem. In the technique, κ-Ga2O3 was grown by epi...

We investigated the effect of mask materials on the epitaxial lateral overgrowth (ELO) characteristics of alpha-Ga2O3 and developed an EL...

β-Ga2O3 has not been patterned using backside-exposure lithography, despite its high potential applications in future power electronics a...

We demonstrated selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy on SiO2-masked (001) and (010) β-Ga2O3 substrate...

Ten-period binary α-Al2O3/Ga2O3 superlattices were fabricated on r-plane sapphire substrates by molecular beam epitaxy. By systematic var...

We succeeded in fabricating 10-period coherent γ Al2O3/Ga2O3 superlattices (SLs) on MgAl2O4 substrates by molecular beam epitaxy. By vary...