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Filtering by: Journal Applied Physics Express Language English

1. Growth dynamics of selective-area-grown rutile-type SnO2 on TiO2 (110) substrate

Description/Abstract:: We demonstrated selective-area growth of r-SnO2 on a SiO2-masked r-TiO2 (110) substrate. The heteroepitaxy on a window started with a Vol...
Keyword:: SnO2 and selective area growth
Resource Type:: Article
Author:: Hitoshi Takane, Takayoshi Oshima, Katsuhisa Tanaka, and Kentaro Kaneko
Journal:: Applied Physics Express
Date Uploaded:: 13/04/2024

2. Interpretation of time-dependent current and resistance of HTS closed loop with superconducting joint considering flux creep

Description/Abstract:: A low circuit resistance is required for a superconducting magnet operated in persistent mode using superconducting joints. We performed ...
Keyword:: Superconducting joint
Resource Type:: Article
Author:: Yasuaki Takeda, Yuji Tsuchiya, and Gen Nishijima
Journal:: Applied Physics Express
Date Uploaded:: 05/04/2024

3. Rutile-type GexSn1−xO2 alloy layers lattice-matched to TiO2 substrates for device applications

Description/Abstract:: We report the characterization and application of mist-CVD-grown rutile-structured GexSn1−xO2 (x = ∼0.53) films lattice-matched to isostr...
Keyword:: GeO2, SnO2, and TiO2
Resource Type:: Article
Author:: Hitoshi Takane, Takayoshi Oshima, Takayuki Harada, Kentaro Kaneko, and Katsuhisa Tanaka
Journal:: Applied Physics Express
Date Uploaded:: 30/01/2024
Date Modified:: 01/02/2024

4. Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral overgrowth

Description/Abstract:: We demonstrated the double layered epitaxial lateral overgrowth (ELO) of α-Ga2O3 by halide vapor phase epitaxy. Patterned masks were prep...
Keyword:: ELO, dislocation, and α-Ga2O3
Resource Type:: Article
Author:: Katsuaki Kawara, Yuichi Oshima, Mitsuru Okigawa, and Takashi Shinohe
Journal:: Applied Physics Express
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024

5. Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy

Description/Abstract:: We demonstrated selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy on SiO2-masked (001) and (010) β-Ga2O3 substrate...
Keyword:: Ga2O3 and selective area growth
Resource Type:: Article
Author:: Takayoshi Oshima and Yuichi Oshima
Journal:: Applied Physics Express
Date Uploaded:: 28/11/2023
Date Modified:: 28/11/2023